X-ray absorption spectroscopy of Cu-doped WO3 films for use in electrochemical metallization cell memory

• Published in: Journal of non-crystalline solids Vol. 401; pp. 87 - 91
• Main Authors: Kuzmin, A., Anspoks, A., Kalinko, A., Timoshenko, J., Kalendarev, R.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-10-2014
• Subjects: Absorption spectroscopy; Atomic structure; Copper; Electrochemical metallization cell; EXAFS; Metallizing; Silicon; Synchrotron radiation; Thin films; Tungsten oxides; WO3; X-rays; XANES; Thin films; WO3; XANES; EXAFS; Electrochemical metallization cell
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2014.01.022

We have performed the first synchrotron radiation X-ray absorption spectroscopy (EXAFS/XANES) study of the local atomic and electronic structure around Cu and W ions in WO3/Cu/WO3/Si and WO3/Cu/Si multilayered structures, aimed for the application in the electrochemical metallization cell memory. The influence of low-temperature annealing at 135°C has been investigated in details, and a structural model of Cu-doped WO3 films is proposed.
•Cu-doped WO3 films were prepared by DC magnetron sputtering.•Local atomic and electronic structure was studied by X-ray absorption spectroscopy.•In the as-prepared samples copper is mostly present in the metallic phase.•Copper ions transfer into Cu+ upon annealing at 135°C.