Aluminium nitride–niobium multilayers and free-standing structures for MEMS

• Published in: Thin solid films Vol. 515; no. 2; pp. 489 - 492
• Main Authors: Danylyuk, S.V., Ott, R., Panaitov, G., Pickartz, G., Hollmann, E., Vitusevich, S.A., Belyaev, A.E., Klein, N.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 25-10-2006; Elsevier Science
• Subjects: AlN; Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; DC sputtering; Electronics; Exact sciences and technology; Materials science; MEMS; Micro- and nanoelectromechanical devices (mems/nems); Other semiconductors; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Single-crystal and powder diffraction; Specific materials; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Wide band gap semiconductors; X-ray diffraction and scattering; AlN; 85.85.+j; 77.84.Bw; MEMS; 81.15.Cd; Wide band gap semiconductors; 68.55.Jk; DC sputtering; RBS; Multilayer; 77.84.Bw; 68.55.Jk; 85.85.+j; 81.15.Cd; Wide band gap semiconductors; AlN; DC sputtering; MEMS; Aluminium nitride; Multiple layer; Secondary ion mass spectrometry; X ray diffraction; Layer thickness; III-V compound; Optimization; Inorganic compound; Operating conditions; Thin film; Rutherford backscattering; Piezoelectric materials; Size effect; Niobium nitride; Silicon; Microstructure; Microelectromechanical device; Sacrificial layer; III-V semiconductors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.12.276

In this article we investigate aluminium nitride–niobium thin films sputtered on Si wafers and free-standing structures made of these layers. The quality of the films is characterized by Rutherford backscattering (RBS), X-ray diffraction and time-of-flight secondary ion mass spectroscopy (TOF SIMS). The thickness and composition of the intermediate layers between the silicon and AlN was found to be crucial for the uniformity and orientation of the AlN. Optimization of growth conditions and layer thicknesses was performed in order to achieve a high quality of the films. Parameters of sputtered AlN layers of different thicknesses sufficient for use in piezoelectric and thermal switches were attained. Subsequently, a sacrificial layer technology was developed to manufacture multilayer free-standing bridges of different lengths and widths from Nb–AlN structures. Bridges down to 20 μm in size were controllably produced and investigated by e-beam microscopy. The technology proved to be reliable and robust at all ranges of investigated thicknesses and lateral sizes of microstructures.