SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz

• Published in: IEEE electron device letters Vol. 31; no. 12; pp. 1398 - 1400
• Main Authors: Müller, Alexandru, Neculoiu, Dan, Konstantinidis, George, Deligeorgis, George, Dinescu, Adrian, Stavrinidis, Antonis, Cismaru, Alina, Dragoman, Mircea, Stefanescu, Alexandra
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-12-2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Acoustic wave devices, piezoelectric and piezoresistive devices; Applied sciences; Devices; E-beam nanolithography; Electronics; Exact sciences and technology; Fingers; Frequency ranges; Frequency response; Gallium nitride; Gallium nitrides; interdigitated transducers (IDTs); Microelectronic fabrication (materials and surfaces technology); Microwave measurements; Nanolithography; Resonant frequency; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; surface acoustic wave (SAW); Surface acoustic wave devices; Surface acoustic waves; Transducers; Acoustic wave device; GHz range; Binary compound; Electron beam lithography; Acoustic wave; Surface acoustic wave devices; Interdigital transducer; Metallizing; Surface wave; Spacing; Gallium nitride; III-V compound; interdigitated transducers (IDTs); Microelectronic fabrication; E-beam nanolithography; s parameter; surface acoustic wave (SAW); Maskless lithography; Frequency response; Wafer
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2010.2078484

This letter describes the manufacture and characterization of surface acoustic wave (SAW) devices on GaN/Si devoted to applications above the 5-GHz frequency range. The SAW structures consist of two face-to-face interdigitated transducers (IDTs), placed at different distances. Using a TiAu metallization, 80-nm-thick and advanced e-beam lithographical techniques with IDTs with fingers and spacings 200 nm wide have been obtained on the GaN layer. On wafer measurement of the S parameters have demonstrated the operation at approximately 5.6 GHz. The frequency response of the devices is explained in detail.