Continuity equation based nonquasi-static charge model for independent double gate MOSFET

• Published in: Journal of computational electronics Vol. 13; no. 2; pp. 353 - 359
• Main Authors: Sharan, Neha, Mahapatra, Santanu
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01-06-2014; Springer Nature B.V
• Subjects: Analog circuits; Approximation; Charge; Computer simulation; Continuity equation; Devices; Electrical Engineering; Engineering; Gates (circuits); Mathematical and Computational Engineering; Mathematical and Computational Physics; Mathematical models; Mechanical Engineering; MOSFETs; Optical and Electronic Materials; Ordinary differential equations; Simulation; Theoretical; Transistors; Voltage; Compact modeling; Double gate (DG) MOSFET; Nonquasi static (NQS) effect
• ISSN: 1569-8025; 1572-8137
• DOI: 10.1007/s10825-013-0540-1

Using the numerical device simulation we show that the relationship between the surface potentials along the channel in any double gate (DG) MOSFET remains invariant in QS (quasistatic) and NQS (nonquasi-static) condition for the same terminal voltages. This concept along with the recently proposed ‘piecewise charge linearization’ technique is then used to develop the intrinsic NQS charge model for a Independent DG (IDG) MOSFET by solving the governing continuity equation. It is also demonstrated that unlike the usual MOSFET transcapacitances, the inter-gate transcapacitance of a IDG-MOSFET initially increases with the frequency and then saturates, which might find novel analog circuit application. The proposed NQS model shows good agreement with numerical device simulations and appears to be useful for efficient circuit simulation.