Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

• Published in: Nanoscale research letters Vol. 5; no. 2; pp. 360 - 363
• Main Authors: Cirlin, G. E., Bouravleuv, A. D., Soshnikov, I. P., Samsonenko, Yu B., Dubrovskii, V. G., Arakcheeva, E. M., Tanklevskaya, E. M., Werner, P.
• Format: Journal Article
• Language: English
• Published: New York Springer New York 01-02-2010; Springer
• Subjects: Chemistry and Materials Science; Materials Science; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Solar cells; Molecular beam epitaxy; Nanowires; GaAs; Photovoltaic properties
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1007/s11671-009-9488-2

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.