Effect of potassium permanganate on morphological, structural and electro-optical properties of graphene oxide thin films

• Published in: Arabian journal of chemistry Vol. 14; no. 2; p. 102953
• Main Authors: Kashif, Muhammad, Jaafar, Erdawaty, Bhadja, Poonam, Wah Low, Foo, Kudnie Sahari, Siti, Hussain, Shahid, Kai Loong, Foo, Ahmad, Awais, Saad AlGarni, Tahani, Shafa, Muhammad, Asghar, Humaira, Al-Tamrah, Saad A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-02-2021; Elsevier
• Subjects: Electrical; Graphene oxide; Oxidizing agent; Potassium permanganate; Thin film; Oxidizing agent; UV–VIS; I-V; FTIR; GO; Graphene oxide; SEM; Electrical; XRD; Potassium permanganate; Thin film
• ISSN: 1878-5352; 1878-5379
• DOI: 10.1016/j.arabjc.2020.102953

This work investigated the effect of Potassium Permanganate (KMnO4) on graphene oxide (GO) properties, especially on electrical properties. The GO thin films were deposited on a glass substrate using drop casting technique and were analysed by using various type of spectroscopy (e.g. Scanning Electron Microscopy (SEM), Ultra- Violet Visible (UV–VIS), Fourier Transform Infrared (FTIR), X-Ray Diffraction (XRD), optical band gap, Raman Spectroscopy). Furthermore, the electrical experiments were carried out by using current–voltage (I-V) characteristic. The GO thin film with 4.5 g of KMnO4 resulted in higher conductivity which is 3.11 × 10−4 S/cm while GO with 2.5 g and 3.5 g of KMnO4 achieve 2.47 × 10−9 S/cm and 1.07 × 10−7 S/cm, respectively. This further affects the morphological (SEM), optical (band gap, UV–Vis, FTIR, and Raman), and crystalline structural (XRD) properties of the GO thin films. The morphological, elemental, optical, and structural data confirmed that the properties of GO is affected by different amount of KMnO4 oxidizing agent, which revealed that GO can potentially be implemented for electrical and electronic devices.