Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM

• Published in: IEEE electron device letters Vol. 32; no. 7; pp. 958 - 960
• Main Authors: SHIN, Jungho, PARK, Jubong, LEE, Joonmyoung, PARK, Sangsu, KIM, Seonghyun, LEE, Wootae, KIM, Insung, LEE, Daeseok, HWANG, Hyunsang
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-07-2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; C (programming language); Design. Technologies. Operation analysis. Testing; Devices; Durability; Electrodes; Electronics; Endurance; Exact sciences and technology; Integrated circuits; Integrated circuits by function (including memories and processors); Platinum; Resistance; RRAM; Schottky diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Silicon dioxide; Switches; Switching; switching speed; switching uniformity; Variability; Performance evaluation; switching speed; switching uniformity; Non volatile memory; Silicon oxides; Random access memory; Integrated circuit; Erasure; RRAM; IV-VI compound; Switching; Comparative study
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2147274

We investigated the effect of program/erase speed on switching uniformity in filament-type resistive memory with Mo/SiO x /Pt structure. The RRAM device exhibits a large on/off ratio (>; 10 5 ), good data retention properties even at 200°C, and stable pulse-switching endurance up to 106 cycles. In comparison with slow switching operation, fast switching operation achieves more uniform program/erase performance in filament-type resistive memory. In order to determine the relationship between the switching speed and the uniformity, we carried out an effective analysis of real pulse operation.