Improved spatial resolution by MOSFET dosimetry of an x-ray microbeam

Measurement of the lateral profile of the dose distribution across a narrow x-ray microbeam requires a dosimeter with a micron resolution. We investigated the use of a MOSFET dosimeter in an “edge-on” orientation with the gate insulating oxide layer parallel to the direction of the beam. We compared...

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Bibliographic Details
Published in:Medical physics (Lancaster) Vol. 27; no. 1; pp. 239 - 244
Main Authors: Kaplan, Greg I., Rosenfeld, Anatoly B., Allen, Barry J., Booth, Jeremy T., Carolan, Martin G., Holmes-Siedle, Andrew
Format: Journal Article
Language:English
Published: United States American Association of Physicists in Medicine 01-01-2000
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Summary:Measurement of the lateral profile of the dose distribution across a narrow x-ray microbeam requires a dosimeter with a micron resolution. We investigated the use of a MOSFET dosimeter in an “edge-on” orientation with the gate insulating oxide layer parallel to the direction of the beam. We compared results using this technique to Gafchromic film measurements of a 200 micrometer wide planar x-ray microbeam. The microbeam was obtained by using a vernier micrometerdriven miniature collimator attached to a Therapax DXT300 x-ray machine operated at 100 kV p . The “edge-on” application allows utilization of the ultra thin sensitive volume of the MOSFET detector. Spatial resolution of both the MOSFET and Gafchromic film dosimeters appeared to be of about 1 micrometer. The MOSFET dosimeter appeared to provide more uniform dose profiles with the advantage of on-line measurements.
ISSN:0094-2405
2473-4209
DOI:10.1118/1.598866