Improved spatial resolution by MOSFET dosimetry of an x-ray microbeam
Measurement of the lateral profile of the dose distribution across a narrow x-ray microbeam requires a dosimeter with a micron resolution. We investigated the use of a MOSFET dosimeter in an “edge-on” orientation with the gate insulating oxide layer parallel to the direction of the beam. We compared...
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Published in: | Medical physics (Lancaster) Vol. 27; no. 1; pp. 239 - 244 |
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Main Authors: | , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
United States
American Association of Physicists in Medicine
01-01-2000
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Subjects: | |
Online Access: | Get full text |
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Summary: | Measurement of the lateral profile of the dose distribution across a narrow x-ray microbeam requires a dosimeter with a micron resolution. We investigated the use of a MOSFET dosimeter in an “edge-on” orientation with the gate insulating oxide layer parallel to the direction of the beam. We compared results using this technique to Gafchromic film measurements of a 200 micrometer wide planar x-ray microbeam. The microbeam was obtained by using a vernier micrometerdriven miniature collimator attached to a Therapax DXT300 x-ray machine operated at 100
kV
p
.
The “edge-on” application allows utilization of the ultra thin sensitive volume of the MOSFET detector. Spatial resolution of both the MOSFET and Gafchromic film dosimeters appeared to be of about 1 micrometer. The MOSFET dosimeter appeared to provide more uniform dose profiles with the advantage of on-line measurements. |
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ISSN: | 0094-2405 2473-4209 |
DOI: | 10.1118/1.598866 |