The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

• Published in: IEEE transactions on nuclear science Vol. 52; no. 6; pp. 2125 - 2131
• Main Authors: Warren, K.M., Weller, R.A., Mendenhall, M.H., Reed, R.A., Ball, D.R., Howe, C.L., Olson, B.D., Alles, M.L., Massengill, L.W., Schrimpf, R.D., Haddad, N.F., Doyle, S.E., McMorrow, D., Melinger, J.S., Lotshaw, W.T.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2005; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuits; Cross section; Cross sections (physics); Discrete event simulation; Electronics; Energy measurement; Geant4; Ionization; Laboratories; MRED; Nuclear electronics; Nuclear physics; Nuclear power generation; Nuclear reactions; Random access memory; Simulation; Single event upset; Single event upsets; Static random access memory; Transport
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2005.860677

Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code. Electronic and nuclear physics were used to generate statistical profiles of charge deposition in the sensitive volume of an SEU hardened SRAM. Simulation results show that materials external to the sensitive volume can affect the experimentally measured cross-section curve.