A new radiotherapy surface dose detector:the MOSFET

• Published in: Medical physics (Lancaster) Vol. 23; no. 5; p. 655
• Main Authors: Butson, M J, Rozenfeld, A, Mathur, J N, Carolan, M, Wong, T P, Metcalfe, P E
• Format: Journal Article
• Language: English
• Published: United States 01-05-1996
• Subjects: Electrons; Equipment Design; Humans; Radiotherapy - instrumentation; Radiotherapy - methods; Radiotherapy Dosage; Reproducibility of Results; Skin - radiation effects; X-Ray Therapy - instrumentation; X-Ray Therapy - methods
• ISSN: 0094-2405
• DOI: 10.1118/1.597702

Radiotherapy x-ray and electron beam surface doses are accurately measurable by use of a MOS-FET detector system. The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is approximately 200-microns in diameter and consists of a 0.5-microns Al electrode on top of a 1-microns SiO2 and 300-microns Si substrate. Results for % surface dose were within +/- 2% compared to the Attix chamber and within +/- 3% of TLD extrapolation results for normally incident beams. Detectors were compared using different energies, field size, and beam modifying devices such as block trays and wedges. Percentage surface dose for 10 x 10-cm and 40 x 40-cm field size for 6-MV x rays at 100-cm SSD using the MOSFET were 16% and 42% of maximum, respectively. Factors such as its small size, immediate retrieval of results, high accuracy attainable from low applied doses, and as the MOSFET records its dose history make it a suitable in vivo dosimeter where surface and skin doses need to be determined. This can be achieved within part of the first fraction of dose (i.e., only 10 cGy is required.)