Hybridization platform assembly and demonstration of all-optical wavelength conversion at 10 Gb/s

• Published in: Journal of lightwave technology Vol. 23; no. 5; pp. 1852 - 1859
• Main Authors: Armstrong, I., Andonovic, I., Kelly, A.E., Bonthron, S., Bebbington, J., Michie, C., Tombling, C., Fasham, S., Johnstone, W.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-05-2005; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: All-optical wavelength conversion; Applied sciences; Assembly; Circuit properties; Conversion; Converters; Devices; Electric, optical and optoelectronic circuits; Electronics; Etching; Exact sciences and technology; Frequency conversion; hybrid integrated circuits; Integrated optics. Optical fibers and wave guides; Mach-Zehnder interferometers; Nonlinear optics; Optical and optoelectronic circuits; optical communication; optical device fabrication; Optical devices; Optical interferometry; optical planar waveguide components; optical signal regeneration; Optical wavelength conversion; Platforms; Repeaters; Semiconductor optical amplifiers; semiconductor optical amplifiers (SOAs); Stimulated emission; Wavelengths; Integrated optics; optical planar waveguide components; Optical telecommunication; hybrid integrated circuits; Mach Zehnder interferometer; optical device fabrication; All optical circuit; Regeneration; Semiconductor amplifier; semiconductor optical amplifiers (SOAs); Planar waveguide; frequency conversion; All-optical wavelength conversion; Hybrid circuit; NRZ code; Optical amplifier; Performance analysis; Manufacturing; optical communication; Optical frequency conversion; optical signal regeneration
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/JLT.2005.846900

The development of a high-performance hybrid integration platform is demonstrated using an all-optical wavelength converter based on an integrated semiconductor optical amplifier (SOA) Mach-Zehnder interferometer (MZI). The device structure, transfer functions, power penalties and regenerative properties are presented for data rates up to 10 Gb/s.