Effect of High-Pressure Oxygen Annealing on Bi2SiO5-Added Ferroelectric Thin Films
The crystallization temperature of typical ferroelectric films such as PbZr1-XTiXO3 (PZT), SrBi2Ta2O9 (SBT), and (Bi,La)4Ti3O12 (BLT) was found to decrease by 150 to 200 C in a chemical solution deposition method by adding Bi2SiO5 (BSO) in the sol-gel solutions. The ferroelectric and insulating char...
Saved in:
| Published in: | Japanese Journal of Applied Physics Vol. 41; no. Part 2, No. 10B; pp. L1164 - L1166 |
|---|---|
| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
15-10-2002
|
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | The crystallization temperature of typical ferroelectric films such as PbZr1-XTiXO3 (PZT), SrBi2Ta2O9 (SBT), and (Bi,La)4Ti3O12 (BLT) was found to decrease by 150 to 200 C in a chemical solution deposition method by adding Bi2SiO5 (BSO) in the sol-gel solutions. The ferroelectric and insulating characteristics of the BSO-added films were improved by annealing in high-pressure O up to 9.9 atms. Three-orders-of-magnitude improvement of the leakage current density was observed in BSO-added BLT films after annealing at 9.9 atms, while pronounced increase of the saturation polarization level was observed in BSO-added SBT and PZT films. From cross-sectional TEM observations, the origin of the improved characteristics was speculated to be the structural change of the films. 11 refs. |
|---|---|
| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0021-4922 |
| DOI: | 10.1143/JJAP.41.L1164 |