Sputter deposition of high resistivity boron carbide

• Published in: Thin solid films Vol. 335; no. 1; pp. 174 - 177
• Main Authors: Ahmad, Ahmad A, Ianno, N.J, Hwang, Seong-Don, Dowben, P.A
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 14-12-1998; Elsevier Science
• Subjects: Applied sciences; Boron carbide; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Deposition process; Deposition technology; Electronics; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sputtering; Boron carbide; Sputtering; Deposition process; Inorganic compounds; Films; Binary compounds; Crystal growth from vapors; Junction diodes; Semiconductor diodes; Experimental study; Fabrication property relation; Magnetrons; Energy gap; Optical microscopy; Optical properties; Chemical composition; Boron carbides; IV characteristic; Radiofrequency sputtering
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(98)00876-1

We have succeeded in the rf magnetron sputter deposition of high resistivity boron carbide (B
1−
x
C
x
). This has been accomplished by the sputter depositing the boron carbide from a methane saturated boron carbide target. We show that the composition and optical band gap of the sputter deposited material are functions of the applied rf power. Furthermore, boron carbide/silicon heterojunction diodes fabricated via sputtering compare favorably with those fabricated from borane cage molecule sources using plasma enhanced chemical vapor deposition (PECVD).