RF, DC, and Reliability Performance of MIM Capacitors Embedded in Organic Substrates by Wafer-Transfer Technology (WTT) for System-on-Package Applications

• Published in: IEEE transactions on electron devices Vol. 54; no. 3; pp. 425 - 432
• Main Authors: Liao, E.B., Hongyu Li, Guo, L.H., Guo-Qiang Lo, Kumar, R., Balasubramanian, N., Dim-Lee Kwong
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-03-2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Capacitance; Capacitors; Coefficients; Compound structure devices; Devices; Dielectric, amorphous and glass solid devices; Direct current; Electronics; Embedded capacitor; Exact sciences and technology; leakage; Linearity; Radio frequencies; radio frequency (RF); reliability; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon substrates; Studies; system on package (SoP); temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC); MIM devices; system on package (SoP); High density; Spurious capacity; Lumped parameter circuit; voltage coefficient of capacitance (VCC); Modeling; Low voltage; Time dependence; Inductance; Direct current; Technology transfer; Wafer; Electrical characteristic; Voltage dependence; MIM structure; temperature coefficient of capacitance (TCC); Embedded capacitor; Radiofrequency; Transfer processing; Temperature coefficient; Equivalent circuit; radio frequency (RF); Capacitance; Reliability; System on package; Capacitor; leakage
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2006.890233

In this paper, radio frequency (RF), dc, and reliability performance have been studied on metal-insulator-metal (MIM) capacitors embedded in organic substrates. The MIM structure including ~74-nm SiN dielectric was prefabricated on Si and then transferred onto organic substrates (FR-4) by wafer-transfer technology (WTT). The RF characteristics up to 30 GHz were investigated by equivalent lumped circuit modeling, showing that the parameters associated with the MIM layers including the main capacitance, parasitic inductance, and resistance were only slightly changed by the WTT process. The substrate-related parasitics were reduced as a result of the replacement of lossy Si with insulating FR-4 substrates. Excellent capacitance linearity, low voltage coefficient (~2.2 ppm/V 2 ), and temperature coefficient (~38 ppm/degC) were obtained for capacitors on FR-4 substrates. Current-voltage and time-dependent dielectric breakdown tests verified that, after the harsh processes of WTT, the MIM structures maintained the intrinsic reliability as those originally fabricated on Si. This paper, along with earlier reports, proved that WTT presented a new dimension to realize embedded capacitors for high-density circuit board and system-on-package applications