Low temperature direct bonding: An attractive technique for heterostructures build-up

• Published in: Microelectronics and reliability Vol. 52; no. 2; pp. 331 - 341
• Main Authors: Moriceau, H., Rieutord, F., Fournel, F., Di Cioccio, L., Moulet, C., Libralesso, L., Gueguen, P., Taibi, R., Deguet, C.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-02-2012
• Subjects: Assembling; Bonding; Chemical-mechanical polishing; Heterostructures; Metal bonding; Microelectronics; Silicon; Surface preparation
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2011.08.004

► Assembling materials or components for innovative applications. ► Low temperature (<500
°C) direct bonding processes. ► Review of key surface preparation parameters. ► Improvement shown through various processes as CMP or surface activation by plasma. ► Applications to bare or patterned surfaces for bonded heterostructure fabrication.
Low temperature direct bonding has been used extensively for assembling materials or components in the microelectronics and microsystem industries. We review here some key features of this technique both from the experimental and practical point of views. We give also some indications on the physical and chemical mechanisms involved in this attractive process, to better identify the important parameters impacting the quality and reliability of the technique. We describe mechanisms and report results on Si and SiO
2 bonding processes. Emphasis is put on improvements that allow obtaining strong and high quality bonding in low temperature process. We demonstrate that direct bonding can be applied as well to metal bonding, mainly to obtain conductive bonding, provided an efficient process can be used for surface preparation, e.g. CMP smoothing. More generally we show that direct bonding is well suited for many heterostructures via low temperature process for instance.