Improvement in heat dissipation by transfer of IV-VI epilayers from silicon to copper

• Published in: IEEE photonics technology letters Vol. 16; no. 11; pp. 2433 - 2435
• Main Authors: Li, Y.F., McCann, P.J., Sow, A., Yao, C., Kamat, P.C.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-11-2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Assembly; Bonding; Buffer layers; Copper; Heat transfer; Metallization; Molecular beam epitaxial growth; Molecular beam epitaxy; Quantum well devices; Silicon; Substrates
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2004.834908

A successful metallization (Au-InSn alloy) bonding and substrate removal procedure is described for improving epilayer heat dissipation. Two IV-VI semiconductor multiple quantum well (MQW) structures grown on silicon host substrates by molecular beam epitaxy with a CaF/sub 2/ (or CaF/sub 2/-BaF/sub 2/) buffer layer were bonded epilayer down to the tips of a copper bar assembly and then the Si substrates were removed by dissolving the CaF/sub 2/ (or CaF/sub 2/-BaF/sub 2/) buffer layer in water. The bonded IV-VI epilayers were cleaved by separation of the copper bars. Photoluminescence (PL) data before and after transfer showed that an increase in diode laser pumping caused a smaller blue shift in the PL energies for the structures bonded to copper when compared to the as-grown samples. Calculations revealed that epilayers transferred to copper were at least 20/spl deg/C cooler than the same epilayers on silicon when illuminated with a continuous wave (/spl lambda/=911 nm) laser at a power density of about 25 W/cm/sup 2/.