Device design optimization with interface engineering for highly efficient mixed cations and halides perovskite solar cells

• Published in: Results in physics Vol. 20; p. 103707
• Main Authors: Kanoun, Mohammed Benali, Kanoun, Ahmed-Ali, Merad, Abdelkrim E., Goumri-Said, Souraya
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-01-2021; Elsevier
• Subjects: Device modeling; Mixed cations and halides perovskite; Photovoltaic performance; Mixed cations and halides perovskite; Photovoltaic performance; Device modeling
• ISSN: 2211-3797; 2211-3797
• DOI: 10.1016/j.rinp.2020.103707

[Display omitted]
•Numerical simulation based on mixed cations and halides perovskite device modeling.•Efficiency was achieved up to 24% by PTAA and Cu2O as hole transport layer.•The optimum thickness of about 400 nm.•The reduction of defect density enhance the device performance.•Electron affinity effect was analyzed to reach higher cell efficiency.
Mixed cations and halides perovskite materials in solar cells further enhance the goal of achieving higher efficiency and long-term stability at low cost for manufacturing. In this work, a numerical simulation based on device modeling is directed to explore the effect of defect density, perovskite layer thickness, doping density, hole transport layers, on the cell performance of the composite perovskite devices. Our outcomes revealed that the optimal thickness of mixed perovskite absorber is obtained around 400 nm. Therefore, several potential inorganic hole transport layers are investigated. The results show that mixed perovskite with PTAA and Cu2O as hole transport layers are the most suitable materials and efficient systems owing to their enhanced hole transport and high electric conductivity. Moreover, the optimum defect density parameter should be ordered under ~1015 cm3. Further simulations were handled to examine the impact of electron affinity in interface layers on the achievement of solar cells. Two interface layers are introduced into the device model by considering the interface carrier recombination.