Measurement of semiconductor heterojunction band discontinuities using free electron laser

• Published in: Japanese Journal of Applied Physics Vol. 36; no. 3B; pp. 1795 - 1798
• Main Authors: NISHI, K, OHYAMA, H, SUZUKI, T, MITSUYU, T, TOMIMASU, T
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01-03-1997
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Other inorganic semiconductors; Physics; Aluminium arsenides; Gallium arsenides; Inorganic compounds; Semiconductor materials; Free electron lasers; Ternary compounds; Binary compounds; Zinc selenides; Experimental study; Photoemission; Heterojunctions; Band offset; Photoconductivity
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.36.1795

Measurements of the band discontinuity of semiconductor heterojunctions was carried out using the free electron laser internal photoemission (FEL-IPE) technique. This technique is based on photocurrent spectroscopy utilizing the tunability and intense peak power of the FEL operative in the infrared range. We found that there is a photocurrent threshold in the IPE spectrum of the ZnSe/GaAs and GaAlAs/GaAs heterojunctions which can be identified as the band discontinuity.