XPS investigations of MOCVD tin oxide thin layers on Si nanowires array

• Published in: Results in physics Vol. 11; pp. 507 - 509
• Main Authors: Turishchev, S.Yu, Chuvenkova, O.A., Parinova, E.V., Koyuda, D.A., Chumakov, R.G., Presselt, M., Schleusener, A., Sivakov, V.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-12-2018; Elsevier
• Subjects: Metal assisted wet chemical etching; Metal-organic chemical vapor deposition; Phase composition; Silicon nanowires; Tin oxides; X-ray photoelectron spectroscopy; Tin oxides; Phase composition; Metal assisted wet chemical etching; Metal-organic chemical vapor deposition; Silicon nanowires; X-ray photoelectron spectroscopy
• ISSN: 2211-3797; 2211-3797
• DOI: 10.1016/j.rinp.2018.09.046

Tin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers. The composition of the formed layers were studied by high-resolution X-ray photoelectron spectroscopy of tin (Sn 3d) and oxygen (O 1 s) atoms core levels. The ion beam etching was applied to study the layers depth composition profiles. The composition studies of grown tin oxide layers is shown that the surface of layers contains tin dioxide, but the deeper part contains intermediate tin dioxide and metallic tin phases.