Research Progress in Capping Diamond Growth on GaN HEMT: A Review

• Published in: Crystals (Basel) Vol. 13; no. 3; p. 500
• Main Authors: Wang, Yingnan, Hu, Xiufei, Ge, Lei, Liu, Zonghao, Xu, Mingsheng, Peng, Yan, Li, Bin, Yang, Yiqiu, Li, Shuqiang, Xie, Xuejian, Wang, Xiwei, Xu, Xiangang, Hu, Xiaobo
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01-03-2023
• Subjects: Analysis; Anderson, T.J; Capping; Chemical vapor deposition; Cooling; Crystal lattices; Crystal structure; Crystals; diamond; Diamond films; Diamonds; Diffusion effects; Electric properties; Electrical properties; Epitaxial growth; Epitaxy; Film growth; Gallium nitrate; Gallium nitrides; GaN HEMTs; Heat conductivity; High electron mobility transistors; High temperature effects; Interface analysis; Nucleation; Operating temperature; Semiconductor devices; Single crystals; Structure; Substrates; Thermal diffusion; thermal management; Thermal mismatch; Thermal resistance; Thermodynamic properties
• ISSN: 2073-4352; 2073-4352
• DOI: 10.3390/cryst13030500

With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate the self-heating effect. Incorporating diamond into GaN HEMT is an alternative way to dissipate the heat generated from the active region. In this review, the four main approaches for the integration of diamond and GaN are briefly reviewed, including bonding the GaN wafer and diamond wafer together, depositing diamond as a heat-dissipation layer on the GaN epitaxial layer or HEMTs, and the epitaxial growth of GaN on the diamond substrate. Due to the large lattice mismatch and thermal mismatch, as well as the crystal structure differences between diamond and GaN, all above works face some problems and challenges. Moreover, the review is focused on the state-of-art of polycrystalline or nanocrystalline diamond (NCD) passivation layers on the topside of GaN HEMTs, including the nucleation and growth of the diamond on GaN HEMTs, structure and interface analysis, and thermal characterization, as well as electrical performance of GaN HEMTs after diamond film growth. Upon comparing three different nucleation methods of diamond on GaN, electrostatic seeding is the most commonly used pretreatment method to enhance the nucleation density. NCDs are usually grown at lower temperatures (600–800 °C) on GaN HEMTs, and the methods of “gate after growth” and selective area growth are emphasized. The influence of interface quality on the heat dissipation of capped diamond on GaN is analyzed. We consider that effectively reducing the thermal boundary resistance, improving the regional quality at the interface, and optimizing the stress–strain state are needed to improve the heat-spreading performance and stability of GaN HEMTs. NCD-capped GaN HEMTs exhibit more than a 20% lower operating temperature, and the current density is also improved, which shows good application potential. Furthermore, the existing problems and challenges have also been discussed. The nucleation and growth characteristics of diamond itself and the integration of diamond and GaN HEMT are discussed together, which can more completely explain the thermal diffusion effect of diamond for GaN HEMT and the corresponding technical problems.