New insights on the PBTI phenomena in SiON pMOSFETs

• Published in: Microelectronics and reliability Vol. 52; no. 9-10; pp. 1891 - 1894
• Main Authors: Rott, K., Reisinger, H., Aresu, S., Schlünder, C., Kölpin, K., Gustin, W., Grasser, T.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Kidlington Elsevier Ltd 01-09-2012; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Thermal stress; Degradation; Charge carrier trapping; MOSFET; Bias temperature instability; PMOS technology; Silicon Nitrides oxides; Damaging
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2012.06.015

The physical origin of both Negative- and Positive Bias Temperature Instability (N-/PBTI) is still unclear and under debate. We analyzed the rarely studied recovery behavior after PBTI stress in pMOSFETs and compared it with NBTI data obtained from the same technology. While recovery after short stress times is consistent with the previously reported emission of trapped holes, for stress times larger than 10ks we observe an unusual recovery behavior not reported before. There, the device degradation appears to continue during recovery up to approximately 30s. Only after that time “normal” recovery behavior dominates. We thoroughly analyze this new observation as this may have significant consequences regarding our understanding of both PBTI and NBTI.