Reliability for Recessed Channel Structure n-MOSFET

Recessed channel (Rch) structure n-MOSFET has been stressed under hot carrier injected condition and constant voltage stress (CVS). The degraded data are compared with planar channel (Pch) structure. We discuss difference of hot carrier (HC) degradation and oxide lifetime, which can be explained by...

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Bibliographic Details
Published in:	Microelectronics and reliability Vol. 45; no. 9; pp. 1317 - 1320
Main Authors:	Seo, J.Y., Lee, K.J., Kim, Y.S., Lee, S.Y., Hwang, S.J., Yoon, C.K.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Oxford Elsevier Ltd 01-09-2005 Elsevier
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors MOSFET Gate oxide Electric stress Channel structure Transistor gate Hot carrier n channel Durability Reliability Damaging Planar technology
Online Access:	Get full text
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Summary:	Recessed channel (Rch) structure n-MOSFET has been stressed under hot carrier injected condition and constant voltage stress (CVS). The degraded data are compared with planar channel (Pch) structure. We discuss difference of hot carrier (HC) degradation and oxide lifetime, which can be explained by the electrical field suppression and gate oxide thickness (tox) reduction in recessed channel area.
ISSN:	0026-2714 1872-941X
DOI:	10.1016/j.microrel.2005.07.013