Implementation of lateral Ge-on-Si heterojunction photodetectors via rapid melt growth and self-aligned microbonding for Si photonics

• Published in: Japanese Journal of Applied Physics Vol. 58; no. SJ; p. SJJC02
• Main Authors: Mishra, Pawan, Nguyan, The Anh, Chen, Po-Wei, Tseng, Chih-Kuo, Lee, Ming-Chang M.
• Format: Journal Article
• Language: English
• Published: Tokyo IOP Publishing 01-08-2019; Japanese Journal of Applied Physics
• Subjects: Bias; Dark current; Germanium; Heterojunctions; Photometers; Photonics; Self alignment; Silicon
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/1347-4065/ab24b3

Heterogeneous integration of Ge on a Si lateral p-i-n junction by rapid melt-growth method and self-aligned microbonding is presented. A very thin Ge (100 nm) strip butt-coupled to a Si waveguide for implementing a waveguide photodetector is reported with a low dark current of 1 nA at −3 V bias. The measured 3 dB cut off frequency for the photodetectors is 30 GHz. The internal device responsivity is estimated to be 0.72 A W−1 at the reverse bias of 3 V.