Modeling the behavior of amorphous oxide thin film transistors before and after bias stress

In this work we present a procedure for modeling the characteristics of amorphous oxide semiconductor TFTs, including the hump observed in the transfer characteristics after DC stress. It is based on the Universal Method and Extraction Procedure, UMEM, previously applied to other types of TFTs. The...

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Bibliographic Details
Published in:	Microelectronics and reliability Vol. 52; no. 11; pp. 2532 - 2536
Main Authors:	Cerdeira, A., Estrada, M., Soto-Cruz, B.S., Iñiguez, B.
Format:	Journal Article
Language:	English
Published:	Kidlington Elsevier Ltd 01-11-2012 Elsevier
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Amorphous material Amorphous semiconductors Electric stress Transfer characteristic Compact design Thin film transistor Modeling
Online Access:	Get full text
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Summary:	In this work we present a procedure for modeling the characteristics of amorphous oxide semiconductor TFTs, including the hump observed in the transfer characteristics after DC stress. It is based on the Universal Method and Extraction Procedure, UMEM, previously applied to other types of TFTs. The compact model and extraction procedure allows determining basic device parameters, which can be used to study the device behavior.
ISSN:	0026-2714 1872-941X
DOI:	10.1016/j.microrel.2012.04.017