Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

• Published in: Materials Vol. 13; no. 6; p. 1299
• Main Authors: Kumar, Santosh, Zhang, Xiang, Mariswamy, Vinay Kumar, Reddy, Varra Rajagopal, Kandasami, Asokan, Nimmala, Arun, Rao, S V S Nageswara, Tang, Jue, Ramakrishnna, Seeram, Sannathammegowda, Krishnaveni
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 13-03-2020; MDPI
• Subjects: Carbon; Charge transport; Defects; Emission analysis; Fluence; Gallium nitrides; Ion beams; Ion implantation; Ion irradiation; Luminescence; Microwave communications; Nitrogen ions; Nuclear energy; Occupancy; Optical properties; Photoluminescence; Reinforced reaction injection molding; Schottky diodes; Semiconductors; Studies; Thermionic emission; Vacancies; NIEL; MEI irradiation; optically active defects; LET; surface morphology; Charge transport mechanism; Electrical parameters; GaN Schottky Diodes
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma13061299

The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C
and 650 keV N
ions in the fluence range of 1 × 10
to 1 × 10
ions cm
. The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 × 10
ions cm
and thereafter increases with an increase in fluence of 600 keV C
and 650 keV N
ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C
ion irradiation is more when compared to N
ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C
ion as compared to N
ion.