A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality

• Published in: Journal of magnetism and magnetic materials Vol. 505; p. 166647
• Main Authors: Chavent, A., Iurchuk, V., Tillie, L., Bel, Y., Lamard, N., Vila, L., Ebels, U., Sousa, R.C., Dieny, B., di Pendina, G., Prenat, G., Langer, J., Wrona, J., Prejbeanu, I.L.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-07-2020; Elsevier BV; Elsevier
• Subjects: CMOS; Condensed Matter; Engineering Sciences; Internet of Things; Micro and nanotechnologies; Microelectronics; Physics; Tunnel junctions
• ISSN: 0304-8853; 1873-4766
• DOI: 10.1016/j.jmmm.2020.166647

•Monolithic heterogeneous integration of magnetic functions for Internet of Things (IoT) platforms.•Co-integration of digital and analog functions from a single magnetic tunnel junction stack.•Spin transfer torque (STT) multifunctional stack.•Sensor, non-volatile memory and RF oscillator functions.•Perpendicular magnetic anisotropy in multifunctional magnetic tunnel junction.
The objective of this study is to co-integrate multiple digital and analog functions together within CMOS by developing a universal magnetic tunneling junction stack (MTJ) capable of realizing logic, memory, and analog functions, within a single baseline technology. This will allow monolithic heterogeneous integration, fast and low-power processing, and high integration density, particularly useful for Internet of Things (IoT) platforms. This unique spintransfer-torque (STT) MTJ is called Multifunctional Standardized Stack (MSS). This paper presents the progress regarding memory, oscillator and sensor functionalities targeted for the technology. We show that a single magnetic stack deposition can be used to obtain these three functionalities on the same wafer.