MOVPE growth and characterization of InN/GaN single and multi-quantum well structures

• Published in: Journal of crystal growth Vol. 311; no. 1; pp. 95 - 98
• Main Authors: Kadir, Abdul, Gokhale, M.R., Bhattacharya, Arnab, Pretorius, Angelika, Rosenauer, Andreas
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15-12-2008; Elsevier
• Subjects: A1. Transmission electron microscopy; A3. Quantum wells; B1. Indium nitride; Chemical synthesis methods; Cross-disciplinary physics: materials science; rheology; Crystal growth; Diffraction; Epitaxy; Exact sciences and technology; Gallium nitrides; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Methods of nanofabrication; Nanoscale materials and structures: fabrication and characterization; Optimization; Photoluminescence; Physics; Quantum wells; Segregations; Vapor phase epitaxy; growth from vapor phase; X-rays; A3. Quantum wells; A1. Transmission electron microscopy; 68.37.Og; B1. Indium nitride; 68.65.Fg; 81.15.Gh; 78.67.De; Segregation; Photoluminescence; Roughness; VPE; XRD; Gallium nitride; Quantum size effect; Indium nitride; Nanomaterial synthesis; Quantum wells; Multiple quantum well; III-V compound; Interfaces; Transmission electron microscopy; MOVPE method; Growth mechanism; Nanostructured materials; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.10.056

We report on the growth of InN/GaN quantum well structures via metal organic vapour-phase epitaxy. From X-ray diffraction and transmission electron microscopy measurements we find that at 530
°C, the temperature optimal for InN growth, the quality of the GaN barriers is too poor and quantum well formation is not observed. However, InN quantum wells can be grown at a higher temperature of 570
°C, although with rough interfaces and evidence of In segregation. Though photoluminescence is obtained from all samples, no evidence of quantum size effects is seen.