Thermal conductivity and microstructure of Ti-doped graphite
Ti doped and Si–Ti doped graphites have been developed. The influence of the dopants on the properties and microstructure of doped graphites was analyzed. Test results reveal that Ti doped graphite has excellent bending strength and high thermal conductivity, with highest values reaching 50.2 MPa an...
Saved in:
Published in: | Carbon (New York) Vol. 41; no. 5; pp. 973 - 978 |
---|---|
Main Authors: | , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Oxford
Elsevier Ltd
2003
Elsevier Science |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Ti doped and Si–Ti doped graphites have been developed. The influence of the dopants on the properties and microstructure of doped graphites was analyzed. Test results reveal that Ti doped graphite has excellent bending strength and high thermal conductivity, with highest values reaching 50.2 MPa and 424 W
m
−1
K
−1 for a Ti concentration of 15 wt% in the raw materials. Si added simultaneously with Ti promotes the growth of graphite crystals resulting in an increased thermal conductivity. A kind of Si–Ti doped graphite has been developed with thermal conductivity as high as 494 W
m
−1
K
−1 by optimizing the compositions. Correlation between the content of dopant and the properties and microstructure of doped graphites was studied, and catalytic graphitization mechanism of dopants is also discussed. |
---|---|
ISSN: | 0008-6223 1873-3891 |
DOI: | 10.1016/S0008-6223(02)00429-3 |