Determination of size and bandgap distributions of Si nanoparticles from photoluminescence excitation and emission spectra in n-type stain etched porous silicon

• Published in: Journal of luminescence Vol. 154; pp. 224 - 228
• Main Authors: Rustamov, F.A., Darvishov, N.H., Bagiev, V.E., Mamedov, M.Z., Bobrova, E.Y., Qafarova, H.O.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-10-2014; Elsevier
• Subjects: Bandgap distribution; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanocrystalline materials; Nanopowders; Nanoscale materials and structures: fabrication and characterization; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; PL spectra; PLE spectra; Porous silicon; Size distribution; Size distribution; Bandgap distribution; Porous silicon; PLE spectra; PL spectra; Particle size; Porous materials; Luminescence; Photoluminescence; Etching; Nanoparticles; Phenomenological model; Energy gap; Emission spectra; Excitation spectrum; Silicon; Excitation; Nanostructured materials; Nanocrystal
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/j.jlumin.2014.04.037

The photoluminescence excitation and emission spectra of n-type stain etched porous silicon layers were investigated. From these spectra the average values of optical bandgap and photoluminescence peak position were determined. Based on these experimental data, the photoluminescence emission spectra of porous silicon were analyzed by the phenomenological theory and the fitting parameters of the theory were defined. The size and bandgap distributions of silicon nanoparticles were determined and their mean values were calculated. It was found that the investigated PS samples are the ensemble of nanoparticles with size between 1.5nm and 2.8nm and a bandgap from 2eV to 3.2eV distributed with different probabilities depending on the formation time of porous silicon. It is shown that with increasing formation time, the average size of nanocrystals is slightly increasing, while the average bandgap is slightly narrowing.
•Stain etched n-type porous silicon layers were formed in modified solution.•Joint theoretical analysis of excitation and emission spectra was performed.•Size and bandgap distributions of nanocrystals were determined.•Mean values of nanocrystal size and bandgap were determined.