Multilayer graphene films grown by molecular beam deposition

• Published in: Solid state communications Vol. 150; no. 17; pp. 809 - 811
• Main Authors: Garcia, Jorge M., He, Rui, Jiang, Mason P., Yan, Jun, Pinczuk, Aron, Zuev, Yuri M., Kim, Keun Soo, Kim, Philip, Baldwin, Kirk, West, Ken W., Pfeiffer, Loren N.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01-05-2010; Elsevier
• Subjects: A. Graphene; B. Crystal growth; Bands; Carbon; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition; E. Inelastic light scattering; Evaporation; Exact sciences and technology; Graphene; Lattice dynamics; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beams; Molecular, atomic, ion, and chemical beam epitaxy; Multilayers; Nickel; Phonons in low-dimensional structures and small particles; Physics; E. Inelastic light scattering; B. Crystal growth; A. Graphene; Ultrathin films; Raman spectra; Annealing; Thickness; Optical phonons; Multilayers; Graphene; Phonon mode; Ultrahigh vacuum; Electron beam evaporation
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2010.02.029

Few-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800–900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by
e
-beam evaporation. The thickness of the deposited carbon layers changes continuously from ∼70 Å to less than 4 Å. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface.