Growth of the world's largest sapphire crystals

• Published in: Journal of crystal growth Vol. 225; no. 2-4; pp. 572 - 579
• Main Authors: Khattak, Chandra P., Schmid, Frederick
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-05-2001; Elsevier
• Subjects: A1. Directional solidification; A2. Growth from melt; A2. Single crystal growth; B1. Oxides; B2. Dieelectric materials; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from melts; zone melting and refining; Materials science; Methods of crystal growth; physics of crystal growth; Physics; B1. Oxides; A1. Directional solidification; B2. Dieelectric materials; A2. Growth from melt; A2. Single crystal growth; Large dimension; Inorganic compounds; Directional solidification; Mechanical properties; Purity; Chemical etching; Experimental study; Crystal perfection; Characterization; Monocrystals; Sapphire; Optical properties; Bridgman method; Aluminium oxides; Crystal growth from melts; Heat exchanger method
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)00955-1

Sapphire crystals up to 34cm diameter, 65kg, are grown in production using the heat exchanger method (HEM). The properties of sapphire that are important for high technology applications make it difficult to grow as large high-quality single crystal boules. The HEM has been adapted and efforts to grow 50cm diameter sapphire crystals are in progress. Current applications require the upper limits of sapphire properties to meet current systems demands of the combination of size, purity, crystal perfection with optimum optical and mechanical properties.