Control of nanogap junction resistance by imposed pulse voltage

• Published in: Applied surface science Vol. 256; no. 4; pp. 1028 - 1030
• Main Authors: Masuda, Yuichiro, Takahashi, Tsuyoshi, Furuta, Shigeo, Ono, Masatoshi, Shimizu, Tetsuo, Naitoh, Yasuhisa
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30-11-2009; Elsevier
• Subjects: Atom manipulation; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of nanofabrication; Nanogap electrodes; Nanoscale materials and structures: fabrication and characterization; Nonvolatile memory; Other topics in nanoscale materials and structures; Photolithograph; Physics; Resistance switch; Shadow evaporation; Nanogap electrodes; Nonvolatile memory; 81.07.−b; Photolithograph; Resistance switch; 81.16.Ta; Shadow evaporation; Gold; Transition elements; 81.07.-b; Switching
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2009.05.128

The resistance switching effect of a simple gold nanogap junction was investigated. This device exhibits highly reproducible switching and nonvolatile characteristics. The resistance switching was developed for dependence of the resistance on the applied voltage level. Four separate ranges of resistance were repeatedly controlled by programmed sequential application of voltage pulses, including the operation of data verification.