A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials

A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 19; no. 2; pp. L101 - L104
Main Authors: Matsushita, Yoshiaki, Kishino, Seigô, Kanamori, Masaru
Format: Journal Article
Language:English
Published: 01-01-1980
Online Access:Get full text
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Description
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.19.L101