Synthesis of composite films for ZnO-based memristors with superior stability

• Published in: Materials research express Vol. 11; no. 5; pp. 56302 - 56312
• Main Authors: Cao, Boyu, Liu, Hongxin, Li, Tong, Gong, Jixin, Zhang, Sijie, Dove, Martin T
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01-05-2024
• Subjects: artificial synapse; Carbon nanotubes; Electron transfer; Filaments; Free energy; Heat of formation; High temperature; in-situ synthesis; memristor; Memristors; Nanoparticles; Power consumption; Switching; Synapses; synthesis; Zinc oxide; ZnO@CNT composite films
• ISSN: 2053-1591; 2053-1591
• DOI: 10.1088/2053-1591/ad4777

Abstract
Memristors have unique non-volatile characteristics that potentially can emulate biological synapses for applications in neural computing systems. However, the random formation of conductive filaments in these devices can cause various unreliability problems. In this work, films of a composite of ZnO nanoparticles and carbon nanotubes were prepared as functional layers for memristors by an
in-situ
growing strategy (ZnO@CNT-IS) using a straightforward high-temperature annealing treatment. This approach allowed for the formation of a high-quality films with uniform loading of ZnO nanoparticles on the carbon nanotubes, which contributed to a lower formation energy for oxygen vacancies and increased electron transfer rate. As a result, the memristors exhibited faster switching response speed, lower power consumption, and a stabilised switching ratio even after 2000 switching cycles. Based on the analog switching behaviour, the ZnO@CNT-IS-based devices showed significant biological synapse functions and plasticity, indicating their potential for high-density storage and neuromorphic computing.