Preparation of (0 0 1)-oriented PZT thin films on silicon wafers using pulsed laser deposition

• Published in: Journal of crystal growth Vol. 225; no. 2-4; pp. 173 - 177
• Main Authors: Zhao, Jing, Lu, Li, Thompson, C.V., Lu, Y.F., Song, W.D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-05-2001; Elsevier
• Subjects: A3. Laser epitaxy; A3. Pulsed laser deposition; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; A3. Laser epitaxy; 81.15.F; A3. Pulsed laser deposition; Buffer layer; Atomic force microscopy; Inorganic compounds; Crystal orientation; Epitaxy; Lead titanates; Titanates; Crystal growth from vapors; XRD; PZT; Experimental study; Pulsed lasers; Lead zirconates; Orientation relation; Thin films; Zirconates; Magnesium oxides; Strontium titanates; Heteroepitaxy; Excimer lasers; Laser ablation technique; SEM
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)00865-X

Completely (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) thin films deposited on (100)-silicon wafers with SrTiO3 (STO)/MgO as a buffer layer system and YBCO as a electrode, were prepared by using KrF excimer pulsed-laser deposition. The epitaxial relationships, i.e. PZT(001)∥YBCO(001)∥SrTiO3(100)∥MgO(100)∥Si(100) and PZT(110) ∥YBCO(110)∥SrTiO3(011)∥MgO(011) were detected using X-ray θ–2θ scans and pole figures or ϕ-scans. Grain size and surface morphologies of the as-prepared films were examined using atomic force microscopy and scanning electron microscopy.