Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates

Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates

Morphological and optical properties of Si doped In 0.07 Ga 0.93 N multi-quantum-well (MQW) were studied on a vicinal bulk GaN(0001) substrate with low dislocation density. Surface morphology of InGaN MQW was sensitive to the misorientation direction due to the anisotropic step edge structure peculi...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 52; no. 11; pp. 115601 - 115601-6
Main Authors: Sasaoka, Chiaki, Miyasaka, Fumito, Koi, Tomoaki, Kobayashi, Masahide, Murase, Yasuhiro, Ando, Yuji, Yamaguchi, Atsushi A
Format: Journal Article
Language:English
Published: The Japan Society of Applied Physics 01-11-2013
Subjects:
Doping
Indium gallium nitrides
Luminescence
Misorientation
Morphology
Optical properties
Silicon
Silicon substrates
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Summary:Morphological and optical properties of Si doped In 0.07 Ga 0.93 N multi-quantum-well (MQW) were studied on a vicinal bulk GaN(0001) substrate with low dislocation density. Surface morphology of InGaN MQW was sensitive to the misorientation direction due to the anisotropic step edge structure peculiar to a hexagonal crystal. Appropriate Si doping was useful to suppress instability of the step front and a well-aligned straight step structure was demonstrated for the misorientation direction of [$1\bar{1}00$] with Si doping of $5\times 10^{18}$ cm -3 . Low temperature photoluminescence (PL) indicated that good luminescence properties were maintained under the wide range of doping concentration, while PL degradation was observed for heavily doped MQW's. The luminescence properties were discussed based on a self-consistent calculation of the electronic structure of Si-doped MQW's.
Bibliography:AFM images of [$1\bar{2}10$] off samples. Si doping level is (a) undoped and (b) $5\times 10^{18}$ cm -3 . Arrows in the figures indicate the crystallographic direction of each sample. AFM images of [$1\bar{1}00$] off samples. Si doping level is (a) undoped, (b) $5\times 10^{17}$ cm -3 , (c) $5\times 10^{18}$ cm -3 , (d) $5\times 10^{19}$ cm -3 , and (e) $2\times 10^{20}$ cm -3 . Arrows indicate the misorientation direction of [$1\bar{1}00$]. (a) AFM image of In 0.07 Ga 0.93 N/In 0.02 Ga 0.98 N MQW grown on sapphire (0001). Growth was carried out under the same condition as that of MQW on a GaN substrate. (b) Ball and stick diagram of the step structure on GaN(0001). The double-monolayer-height (0.52 nm) steps descending towards the [$1\bar{1}00$] and [$0\bar{1}10$] directions are shown. Dangling bonds at the step edge are indicated by dashed lines. Si doping dependence on 40 K PL spectra of [$1\bar{1}00$] off samples. The same spectra are shown in a (a) linear and (b) logarithmic scale. Temperature dependence on (a) PL peak intensity and (b) PL FWHM. Self-consistent calculation results on MQW electronic structure for Si doping of $5\times 10^{17}$, $5\times 10^{18}$, and $5\times 10^{19}$ cm -3 ; (a) conduction- and valence-band diagram, (b) electron concentration distribution, and (c) ground state wave function of electron (solid line) and hole (dashed line) around the substrate-side well.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.115601