Growth of boron-doped few-layer graphene by molecular beam epitaxy
We investigated the growth of boron-doped few-layer graphene on α-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis and the second where boron was provided only during the second half of the grap...
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| Published in: | Applied physics letters Vol. 112; no. 16 |
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| Main Authors: | , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
16-04-2018
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| Online Access: | Get full text |
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| Summary: | We investigated the growth of boron-doped few-layer graphene on α-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis and the second where boron was provided only during the second half of the graphene growth run. Electrical measurements show a higher p-type carrier concentration for samples fabricated utilizing the second approach, with a remarkable modulation in the carrier concentration of almost two orders of magnitude in comparison to the pristine graphene film. The results concerning the influence of the boron flux at different growth stages of graphene on the electrical and physicochemical properties of the films are presented. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.5019352 |