Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxy

• Published in: Thin solid films Vol. 429; no. 1; pp. 91 - 95
• Main Authors: Bettini, J., de Carvalho, M.M.G., Pudenzi, M.A.A., Laureto, E., Meneses, E.A.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01-04-2003; Elsevier Science
• Subjects: Chemical beam epitaxy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Electrical properties and measurements; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Gallium arsenide; Iii-v semiconductors; Impurities; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Chemical beam epitaxy; Impurities; Electrical properties and measurements; Gallium arsenide; Temperature dependence; Inorganic compounds; Epitaxial layers; Phosphides; Photoluminescence; Hall effect; Crystal growth from vapors; Experimental study; Carbon additions; Gallium phosphides; Residual impurity; Indium phosphides; Carrier density; III-V semiconductors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(03)00060-9

In this work we present a study on the carbon incorporation in InGaP layers grown by Chemical Beam Epitaxy as a function of growth temperature. Hall measurements show that the electron concentration increased from 2.3×10
14 to 8.9×10
16 cm
−3 as the growth temperature increased from 500 °C to 560 °C. Lower growth temperature InGaP layers are more resistive. Using photoluminescence and a carbon-implanted sample, we identify an acceptor level at nearly 45 meV from the top of the valence band. Part of incorporated carbon acts as an acceptor and part as a donor. The electrical and photoluminescence measurements show that the ratio between acceptors and donors increase as the growth temperature decreases. Due to this compensation, samples grown at lower temperatures (500 °C) present a resistively 10
4 times higher than those grown at high temperature (560 °C).