The formation of epitaxial hexagonal boron nitride on nickel substrates

• Published in: Journal of electronic materials Vol. 34; no. 12; pp. 1558 - 1564
• Main Authors: YANG, P. C, PRATER, J. T, LIU, W, GLASS, J. T, DAVIS, R. F
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01-12-2005; Springer Nature B.V
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from vapor; Heat conductivity; High temperature; Materials science; Methods of crystal growth; physics of crystal growth; Nickel; Physics; Polycrystals; Tribology; Scanning electron microscopy; Inorganic compounds; Epitaxial layers; Nucleation; Crystal orientation; Boron nitrides; Scattering; Boron nitride (BN); Binary compounds; Crystal growth from vapors; XRD; Experimental study; Hot wire; Faceting; AES; CVD; Hexagonal lattices; precipitation; Optical microscopy; epitaxial; Growth mechanism
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-005-0165-7

The various crystallographic forms of boron nitride (BN) are of great technological interest because of their demonstrated tribological, high-temperature, thermally conducting, electrically insulating, and wide-bandgap semiconductor properties. Unfortunately, the synthesis of crystalline BN films is still in the early stages of development. Furthermore, although polycrystalline BN films have been prepared by a variety of physical and chemical vapor deposition techniques, the capability does not currently exist for depositing large area single-crystal or oriented films of BN. Such single-crystal films are required for many applications of interest, especially in electronics. The present paper reports on a new approach to the oriented growth of boron nitride using a novel molten layer epitaxy technique. Well-oriented hexagonal boron nitride (h-BN) crystals were obtained with highly faceted crystal shapes. The h-BN was formed via precipitation from a molten, hydrogen-saturated Ni surface layer. Solid cubic BN was utilized as the source material and was dissolved into the substrate surface during a brief high-temperature anneal. It was found that surface melting occurred during this process and the B diffused into the Ni substrate, whereas the N was expelled into the growth chamber. Oriented BN was then precipitated as the surface layer was allowed to resolidify. [PUBLICATION ABSTRACT]