Stacking registry determination of graphene grown on the SiC(0001) by photoelectron holography

• Published in: Surface science Vol. 635; pp. 1 - 4
• Main Authors: Matsui, Hirosuke, Matsui, Fumihiko, Maejima, Naoyuki, Matsushita, Tomohiro, Daimon, Hiroshi
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-05-2015
• Subjects: Buffer layers; Graphene; Graphite; Holography; Interface structure; Photoelectron holography; Photoelectrons; Precursors; Similarity; Stacking; Synchrotron radiation; Interface structure; Photoelectron holography; Graphene; Synchrotron radiation
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2014.11.027

The subsurface structures on top of a 4H-SiC(0001) at two defined thermal graphitization stages, the graphene precursor terminated with (6√3×6√3)-R30° periodicity and single-layer graphene (SLG), were characterized by photoelectron holography. The local atomic configuration at the graphene precursor layer and single-layer graphene (SLG) as well as the interface buffer layer were reconstructed. The existence and similarity of local buckling were confirmed on both the precursor and buffer layers. The vertical position of SLG seen from the buffer layer was observed with the similar height of graphite: 0.33±0.02nm. The stacking registry of SLG on the buffer layer was determined to be AB type.
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•Thermal graphitization stages on 4H-SiC(0001) were characterized by photoelectron holography.•Real-space atomic image confirmed the existence of buckling structure on both the graphene precursor and buffer layers.•The stacking registry of SLG on the buffer layer was AB stacking with the similar height of graphite.