Quantum capture of electrons and intra-dot relaxation by means of Auger processes in quantum dots

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 42; no. 4; pp. 878 - 880
• Main Authors: Vartanian, Arshak L., Asatryan, Anna L., Vardanyan, Karen A., Kirakosyan, Albert A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-02-2010; Elsevier
• Subjects: Auger processes; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron capture; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Physics; Quantum dot; Quantum dots; Relaxation rate; Electron capture; Quantum dot; Auger processes; Relaxation rate; Confinement; Quantum dots; Digital simulation; Electron-phonon interactions; Auger effect; Optical phonons; Charge carrier trapping; Carrier density; Charge carrier injection
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2009.11.133

A theoretical analysis of LO phonon-assisted electron capture and of intra-dot Auger relaxation in quantum dots is presented. The electron capture efficiency is investigated as a function of the lattice temperature and quantum dot radius for different injected electron concentration taking into account the confinement effect for the polar optical phonons in spherical quantum dots. Exact numerical calculations for the phonon-assisted electron capture rate as well as for the Auger scattering rate have been carried out.