Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-ele...

Full description

Saved in:

Bibliographic Details
Published in:	Physica. B, Condensed matter Vol. 407; no. 15; pp. 3059 - 3062
Main Authors:	Woo, Sungho, Hoon Jeong, Jae, Kun Lyu, Hong, Jeong, Seonju, Hyoung Sim, Jun, Hyun Kim, Wook, Soo Han, Yoon, Kim, Youngkyoo
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Kidlington Elsevier B.V 01-08-2012 Elsevier
Subjects:	Alignment Applied sciences Conducting polymers Conductivity Energy Exact sciences and technology Hybrid solar cells Nanocomposites Nanomaterials Nanostructure Nanowires Natural energy Photovoltaic cells Photovoltaic conversion Si nanowire array Silicon Solar cells Solar cells. Photoelectrochemical cells Solar energy Conducting polymers Si nanowire array Conductivity Hybrid solar cells Rectifier effect Band structure Oxidation reduction Fill factor Solar cell Transport process Array Thiophene derivative polymer Styrenesulfonate polymer Vertical alignment Silicon Nanowires Nanodot Series resistance Photoconductivity Heterostructures
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2
ISSN:	0921-4526 1873-2135
DOI:	10.1016/j.physb.2011.08.099