Evolution of Elemental Abundances in Hot Active Region Cores from Chandrayaan-2 XSM Observations

• Published in: The Astrophysical journal Vol. 955; no. 2; pp. 146 - 157
• Main Authors: Mondal, Biswajit, Vadawale, Santosh V., Del Zanna, Giulio, Mithun, N. P. S., Sarkar, Aveek, Mason, Helen E., Janardhan, P., Bhardwaj, Anil
• Format: Journal Article
• Language: English
• Published: Philadelphia The American Astronomical Society 01-10-2023; IOP Publishing
• Subjects: Abundance; Active solar corona; Aluminum; Astrophysics; Bias; Cores; Emission measurements; First ionization potential; Indian spacecraft; Ionization; Lunar probes; Magnesium; Photosphere; Silicon; Soft X ray spectroscopy; Soft x rays; Solar abundances; Solar active regions; Solar x rays; Solar x-ray emission; Spectroscopic observation; X-rays
• ISSN: 0004-637X; 1538-4357
• DOI: 10.3847/1538-4357/acdeeb

Abstract
The first ionization potential (FIP) bias, whereby elemental abundances for low-FIP elements in different coronal structures vary from their photospheric values and may also vary with time, has been widely studied. In order to study the temporal variation and understand the physical mechanisms giving rise to the FIP bias, we have investigated the hot cores of three active regions (ARs) using disk-integrated soft X-ray spectroscopic observations with the Solar X-ray Monitor on board Chandrayaan-2. Observations for periods when only one AR was present on the solar disk were used to ensure that the AR was the principal contributor to the total X-ray intensity. The average values of temperature and emission measure were ∼3 MK and 3 × 10
46
cm
−3
, respectively. Regardless of the AR’s age or activity, the elemental abundances for the low-FIP elements Al, Mg, and Si with respect to the soft X-ray continuum were consistently higher than their photospheric values. The average FIP bias for Mg and Si was 2–2.5, whereas the FIP bias for the mid-FIP element, S, was almost unity. However, the FIP bias for the lowest-FIP element, Al, was observed to be a factor of 2 higher than Si, which, if real, suggests a dependence of the FIP bias of low-FIP elements on their FIP value. Another major result from our analysis is that the FIP bias of these elements is established within ∼10 hr of emergence of the AR and remains almost constant throughout its lifetime.