Power semiconductors empirical diagrams expressing life as a function of temperature excursion

• Published in: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Vol. 29; no. 1; pp. 517 - 522
• Main Authors: Somos, I.L., Piccone, D.E., Willinger, L.J., Tobin, W.H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01-01-1993; Institute of Electrical and Electronics Engineers
• Subjects: ACCELERATORS; Applied sciences; ELECTRICAL EQUIPMENT; ELECTRONIC EQUIPMENT; Electronics; Electrothermal launching; ENGINEERING; Exact sciences and technology; Life testing; LIFETIME; Other multijunction devices. Power transistors. Thyristors; POWER SUPPLIES; RAILGUN ACCELERATORS; RECTIFIERS; SEMICONDUCTOR DEVICES; Semiconductor diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SEMICONDUCTOR SWITCHES; SERVICE LIFE; Silicon; Solid state circuits; Spark gaps; Switches; SWITCHES 426000 > Engineering > Components, Electron Devices & Circuits > (1990-); Temperature; TEMPERATURE DEPENDENCE; Thermal stresses; THYRISTORS; Semiconductor device; Lifetime; Thermal behavior; Solid state device; Power device; Life test; Switching
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/20.195629

Life expectancy for power semiconductor devices under cyclical power is discussed in practical terms as it has evolved over several decades. Predictions of failure, although not absolute, are supported by sound theoretical concepts based on the generalized behavior of materials under elastic-stress conditions. With that, the known property of silicon to fracture when subjected to a single quenching from 350 degrees C to 0 degrees C is combined with results of long-term and accelerated life testing to establish the life expectancy curves. These would apply for specific models and defined current cycling duty including the time gradient of temperature rise.< >