Total ionizing dose effects on flash-based field programmable gate array

• Published in: IEEE transactions on nuclear science Vol. 51; no. 6; pp. 3759 - 3766
• Main Authors: Wang, J.J., Samiee, S., Chen, H.-S., Huang, C.-K., Cheung, M., Borillo, J., Sun, S.-N., Cronquist, B., McCollum, J.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuit testing; Computer simulation; Delay; Field programmable gate array (FPGA); Field programmable gate arrays; floating gate transistor; Ionizing radiation; ionizing radiation effects; Logic; Logic devices; Mathematical models; Nonvolatile memory; Predictive models; Programmable logic arrays; Propagation delay; Radiation effects; Spices; Switches; Thresholds
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2004.839255

The total ionizing dose effect on a commercial Flash-based field programmable gate array is investigated by gamma ray radiation. The floating-gate threshold and logic propagation delay are measured with respect to the total dose. A physical model is also developed to express the threshold in terms of total dose for both unbiased- and biased-radiation conditions. Experimental data of the threshold fit this model for extracting the modeling parameters. The modeling predictions match further experimental data very well for low to moderate total dose. Using modeling and SPICE simulation together, the prediction of the propagation delay is compared to the experimental data. The biased condition has a good fit while the unbiased prediction over-degrades the propagation delay with respect to the experimental data.