DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures

The DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBTs) have been investigated at room temperature and at temperatures down to 5 K. The collector current dependence of the current gain was investigated at various temperatures. The low...

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Published in:	IEEE transactions on microwave theory and techniques Vol. 39; no. 6; pp. 1054 - 1058
Main Authors:	Raman, V.K., Viswanathan, C.R., Kim, M.E.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-06-1991 Institute of Electrical and Electronics Engineers
Subjects:	Applied sciences Doping Double heterojunction bipolar transistors Electronics Exact sciences and technology Frequency Gallium arsenide Heterojunction bipolar transistors Low-frequency noise Noise level Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Space technology Temperature dependence Temperature sensors Transistors Gallium Arsenides Characteristic impedance Heterojunction transistor Aluminium Gallium Arsenides Mixed 1/f noise Experimental study Current gain III-V compound Room temperature Low temperature
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Abstract	The DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBTs) have been investigated at room temperature and at temperatures down to 5 K. The collector current dependence of the current gain was investigated at various temperatures. The low-frequency noise characteristics exhibit both 1/f and generation-recombination components. The noise characteristics are sensitive to changes in base current and insensitive to changes in collector-emitter voltage, thus suggesting that the noise source is located in the vicinity of the emitter-base heterojunction. The noise spectrum follows a simple model based on minority carrier trapping effects at the heterointerface.< >
AbstractList	The DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBTs) have been investigated at room temperature and at temperatures down to 5 K. The collector current dependence of the current gain was investigated at various temperatures. The low-frequency noise characteristics exhibit both 1/f and generation-recombination components. The noise characteristics are sensitive to changes in base current and insensitive to changes in collector-emitter voltage, thus suggesting that the noise source is located in the vicinity of the emitter-base heterojunction. The noise spectrum follows a simple model based on minority carrier trapping effects at the heterointerface.< > The DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBTs) have been investigated at room temperature and at temperatures down to 5 K. The collector current dependence of the current gain was investigated at various temperatures. The low-frequency noise characteristics exhibit both 1/ < e1 > f < /e1 > and generation-recombination components. The noise characteristics are sensitive to changes in base current and insensitive to changes in collector-emitter voltage, thus suggesting that the noise source is located in the vicinity of the emitter-base heterojunction. The noise spectrum follows a simple model based on minority carrier trapping effects at the heterointerface The dc conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBT's) have been investigated at room temperature and at temperatures down to 5 K. The I sub(c) dependence of the current gain has been investigated at various temperatures. The low-frequency noise characteristics exhibit both 1/f and generation-recombination (g-r) components. The noise characteristics are sensitive to changes in base current and insensitive to changes in V sub(ce), thus suggesting that the noise source is located in the vicinity of the emitter-base heterojunction.
Author	Raman, V.K. Viswanathan, C.R. Kim, M.E.
Author_xml	– sequence: 1 givenname: V.K. surname: Raman fullname: Raman, V.K. organization: Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA – sequence: 2 givenname: C.R. surname: Viswanathan fullname: Viswanathan, C.R. organization: Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA – sequence: 3 givenname: M.E. surname: Kim fullname: Kim, M.E.
BackLink	http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19694149$$DView record in Pascal Francis
BookMark	eNqNkU1vFDEMhiNUJLYFiSu3XEBcpk0yk0lyXC1QkCpxgfPIk_XQVLPJEmeE-kv6d0mZ8nGjJ8v24_eV7VN2ElNExl5KcS6lcBdKnVvZW_mEbaTWpnG9ESdsI4S0jeuseMZOiW5q2mlhN-zu3Y77FPeLLyFFDnHP5_SjmTJ-XzD6Wx5TIOT-GjL4gjlQCZ54mvglbOctXdRAnEL8NiO_xkqkmyWuYmM4phkyLxki1cGUiUPhOaUDL3g4YoayZPxt-m-NnrOnE8yELx7iGfv64f2X3cfm6vPlp932qvGtM6XpdYfKtt771uxHNY2t6fR-1GgRUAhrnJnAoO-0dyNYP4HAcZyMb0H3rYH2jL1ZdY851Y2pDIdAHucZIqaFBmWdqNcUjwCV7IRS_we11EYq8yiwb-299dsV9DkRZZyGYw4HyLeDFMP90welhl9Pr-jrB00gD_NUL-8D_eVd7zrZucq9WrmAiH_aq8ZPct65bQ
CODEN	IETMAB
CitedBy_id	crossref_primary_10_1109_16_370076 crossref_primary_10_1109_5_248963 crossref_primary_10_1109_22_734534 crossref_primary_10_1109_16_214742 crossref_primary_10_1109_16_333817
Cites_doi	10.1109/T-ED.1987.23188 10.1016/0378-4363(76)90089-9 10.1016/B978-0-444-86992-0.50090-4 10.1016/0038-1101(85)90110-8 10.1109/16.40886 10.1016/B978-0-444-86992-0.50041-2 10.1016/0038-1101(82)90045-4 10.1109/T-ED.1986.22672 10.1080/00207219008920347 10.1109/16.24343 10.1109/22.32211 10.1109/T-ED.1973.17632
ContentType	Journal Article
Copyright	1991 INIST-CNRS
Copyright_xml	– notice: 1991 INIST-CNRS
DBID	IQODW AAYXX CITATION 7SP 7U5 8FD L7M H8D
DOI	10.1109/22.81681
DatabaseName	Pascal-Francis CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Aerospace Database
DatabaseTitle	CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts Aerospace Database
DatabaseTitleList	Technology Research Database Technology Research Database Solid State and Superconductivity Abstracts
DeliveryMethod	fulltext_linktorsrc
Discipline	Engineering Applied Sciences
EISSN	1557-9670
EndPage	1058
ExternalDocumentID	10_1109_22_81681 19694149 81681
GroupedDBID	-~X .GJ 0R~ 29I 3EH 4.4 5GY 5VS 66. 6IK 85S 97E AAJGR AASAJ ABQJQ ABVLG ACGFO ACGFS ACIWK ACNCT AENEX AETIX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ATWAV B-7 BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 O9- OCL P2P RIA RIE RIG RNS RXW TAE TAF TN5 VH1 VJK VOH XFK IQODW AAYXX CITATION 7SP 7U5 8FD L7M H8D
ID	FETCH-LOGICAL-c397t-654e283ccc37db2fb3745db5e8eae008797fa7ec45c9ba8cfa0ebbf7c3a5637a3
IEDL.DBID	RIE
ISSN	0018-9480
IngestDate	Fri Aug 16 06:29:05 EDT 2024 Fri Aug 16 05:25:10 EDT 2024 Fri Aug 16 07:37:38 EDT 2024 Fri Aug 16 07:35:37 EDT 2024 Fri Aug 23 01:00:52 EDT 2024 Sun Oct 29 17:07:13 EDT 2023 Wed Jun 26 19:25:40 EDT 2024
IsPeerReviewed	true
IsScholarly	true
Issue	6
Keywords	Gallium Arsenides Characteristic impedance Heterojunction transistor Aluminium Gallium Arsenides Mixed 1/f noise Experimental study Current gain III-V compound Room temperature Low temperature
Language	English
License	CC BY 4.0
LinkModel	DirectLink
MergedId	FETCHMERGED-LOGICAL-c397t-654e283ccc37db2fb3745db5e8eae008797fa7ec45c9ba8cfa0ebbf7c3a5637a3
Notes	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
PQID	25156380
PQPubID	23500
PageCount	5
ParticipantIDs	ieee_primary_81681 proquest_miscellaneous_28214022 proquest_miscellaneous_28906810 pascalfrancis_primary_19694149 crossref_primary_10_1109_22_81681 proquest_miscellaneous_25157127 proquest_miscellaneous_25156380
PublicationCentury	1900
PublicationDate	1991-06-01
PublicationDateYYYYMMDD	1991-06-01
PublicationDate_xml	– month: 06 year: 1991 text: 1991-06-01 day: 01
PublicationDecade	1990
PublicationPlace	New York, NY
PublicationPlace_xml	– name: New York, NY
PublicationTitle	IEEE transactions on microwave theory and techniques
PublicationTitleAbbrev	TMTT
PublicationYear	1991
Publisher	IEEE Institute of Electrical and Electronics Engineers
Publisher_xml	– name: IEEE – name: Institute of Electrical and Electronics Engineers
References	ref14 ref11 morgan (ref13) 1988; 6 ref2 ref1 pawlikiewicz (ref10) 1987; 34 ref8 ref7 ref4 ref3 ref6 chang (ref12) 1988 nishida (ref5) 1973; 20 van der ziel (ref9) 1986; 33
References_xml	– volume: 34 start-page: 2009 year: 1987 ident: ref10 article-title: location of 1/f noise sources in bjt's-ii. experiment publication-title: IEEE Transactions on Electron Devices doi: 10.1109/T-ED.1987.23188 contributor: fullname: pawlikiewicz – ident: ref6 doi: 10.1016/0378-4363(76)90089-9 – ident: ref14 doi: 10.1016/B978-0-444-86992-0.50090-4 – volume: 6 start-page: 37 year: 1988 ident: ref13 article-title: Current transport mechanism in n-p-n GaAs/AIGaAs heterojunction bipolar transistors publication-title: GECJ Res contributor: fullname: morgan – ident: ref8 doi: 10.1016/0038-1101(85)90110-8 – ident: ref1 doi: 10.1109/16.40886 – ident: ref11 doi: 10.1016/B978-0-444-86992-0.50041-2 – ident: ref7 doi: 10.1016/0038-1101(82)90045-4 – volume: 33 start-page: 1371 year: 1986 ident: ref9 article-title: location of 1/f noise sources in bjt's and hbjt's-i. theory publication-title: IEEE Transactions on Electron Devices doi: 10.1109/T-ED.1986.22672 contributor: fullname: van der ziel – ident: ref4 doi: 10.1080/00207219008920347 – ident: ref3 doi: 10.1109/16.24343 – ident: ref2 doi: 10.1109/22.32211 – year: 1988 ident: ref12 publication-title: Flicker Noise in Enhancement Degraded and Depletion MOSFET's contributor: fullname: chang – volume: 20 start-page: 221 year: 1973 ident: ref5 article-title: effects of diffusion-induced dislocations on the excess low-frequency noise publication-title: IEEE Transactions on Electron Devices doi: 10.1109/T-ED.1973.17632 contributor: fullname: nishida
SSID	ssj0014508
Score	1.4457688
Snippet	The DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBTs) have been investigated at room... The dc conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBT's) have been investigated at room...
SourceID	proquest crossref pascalfrancis ieee
SourceType	Aggregation Database Index Database Publisher
StartPage	1054
SubjectTerms	Applied sciences Doping Double heterojunction bipolar transistors Electronics Exact sciences and technology Frequency Gallium arsenide Heterojunction bipolar transistors Low-frequency noise Noise level Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Space technology Temperature dependence Temperature sensors Transistors
Title	DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures
URI	https://ieeexplore.ieee.org/document/81681 https://search.proquest.com/docview/25156380 https://search.proquest.com/docview/25157127 https://search.proquest.com/docview/28214022 https://search.proquest.com/docview/28906810
Volume	39
hasFullText	1
inHoldings	1
isFullTextHit
isPrint
link	http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1Lb9swDBbanLbD2u6BpY9UBXZ148pSZB2DPtZTL22B3QxaorAOgR3ECYb9kv7dirKTNGgRYCcbsmQLoiV-lMiPjP1QRoHOLCRWe5FIWWJiFOaJDQujyj1Fi8bUCff67ld-db2iyYmxMIgYnc_wnG7jWb6r7YK2yoaUIyJYOrva5G2k1uq8QKq0W3PD9JV52tHMXqRmKMR5bLeheGImFfKDhCYMhW9zWLxZjqOOudn7n97ts08dkuTjVvQHbAerz-zjK37BL-z56pIHe9e1DLEcKscn9d_Ez1r_6X-8qp8a5HaTtJnXnv-E8WTcDMOl4bSbMEH-mxxn6j9BD8aXlU9Tsor5nJRd5BppOMw5AXFOfFcdWfPyo6_Lmq_s8eb64fI26TIxJDbglXkyUhIDDrHWZtqVwpeZlsqVQagISKx2RnvQaKWypoTcekixLL22GahRpiH7xnpVXeF3xo3zATMZlxKwEM5ABiNhAZyW1gdjsM_OlmIqpi3hRhENldQUQhRxkPvsgIZ_9bwrHGxIc93aULCuNH12uhRvEeYQHYxAhfWiKQLGC93M0-019IXQW2rkItiqQmyrYVJifzt8r_dH7MPaCe2Y9eazBZ6w3cYtBvFPfwGgaQNs
link.rule.ids	315,782,786,798,27935,27936,54770
linkProvider	IEEE
linkToHtml	http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT9wwELYoHFoOLfShblvAlXoNaxx7HR9XvAXlUir1Fk3ssUq1ShDZFeov6d-tx8kurFqtxCmRYyeWJ_Z8Y898w9gXbTWY3EHmTJCZUhVmVmORubgw6iJQtGhKnfDNXP0ojo4XNDkpFgYRk_MZ7tNtOsv3jZvRVtmQckRES2dDK2NEF6u1ODFQWvSrbpzAqhA90eyBsEMp91PLJdWTcqmQJyS0cTBCl8XinwU5aZmTV0_p3xZ72WNJPu6Ev83WsH7NNh8xDL5hf44OebR4fccRy6H2fNLcZ-Gu86D-zevmpkXulmmbeRP4KYwn43YYLy2n_YQJ8p_kOtP8ipowvay6uSW7mE9J3SW2kZbDlBMU58R41dM1zz_6uKx9y76fHF8fnmV9LobMRcQyzUZaYUQizrnc-EqGKjdK-yqKFQGJ186aAAad0s5WULgAAqsqGJeDHuUG8ndsvW5qfM-49SGiJusFQQvpLeQwkg7AG-VCNAcH7PNcTOVtR7lRJlNF2FLKMg3ygG3T8C-e94W7S9J8aG0pXFfZAdubi7eMs4iORqDGZtaWEeXFbhZidQ1zIM2KGoWM1qqUq2pYQfxvH_7X-z32_Oz662V5eX518ZG9eHBJ-8TWp3cz3GHPWj_bTX_9X0N0Brc
openUrl	ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=DC+conduction+and+low-frequency+noise+characteristics+of+GaAlAs%2FGaAs+single+heterojunction+bipolar+transistors+at+room+temperature+and+low+temperatures&rft.jtitle=IEEE+transactions+on+microwave+theory+and+techniques&rft.au=Raman%2C+V.K.&rft.au=Viswanathan%2C+C.R.&rft.au=Kim%2C+M.E.&rft.date=1991-06-01&rft.pub=IEEE&rft.issn=0018-9480&rft.eissn=1557-9670&rft.volume=39&rft.issue=6&rft.spage=1054&rft.epage=1058&rft_id=info:doi/10.1109%2F22.81681&rft.externalDocID=81681
thumbnail_l	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9480&client=summon
thumbnail_m	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9480&client=summon
thumbnail_s	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9480&client=summon