DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures

• Published in: IEEE transactions on microwave theory and techniques Vol. 39; no. 6; pp. 1054 - 1058
• Main Authors: Raman, V.K., Viswanathan, C.R., Kim, M.E.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-06-1991; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Doping; Double heterojunction bipolar transistors; Electronics; Exact sciences and technology; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise level; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Space technology; Temperature dependence; Temperature sensors; Transistors; Gallium Arsenides; Characteristic impedance; Heterojunction transistor; Aluminium Gallium Arsenides Mixed; 1/f noise; Experimental study; Current gain; III-V compound; Room temperature; Low temperature
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/22.81681

The DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBTs) have been investigated at room temperature and at temperatures down to 5 K. The collector current dependence of the current gain was investigated at various temperatures. The low-frequency noise characteristics exhibit both 1/f and generation-recombination components. The noise characteristics are sensitive to changes in base current and insensitive to changes in collector-emitter voltage, thus suggesting that the noise source is located in the vicinity of the emitter-base heterojunction. The noise spectrum follows a simple model based on minority carrier trapping effects at the heterointerface.< >