Control of the degree of surface graphitization on 3C-SiC(100)/Si(100)

• Published in: Surface science Vol. 606; no. 3-4; pp. 217 - 220
• Main Authors: Gogneau, N., Balan, A., Ridene, M., Shukla, A., Ouerghi, A.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 01-02-2012; Elsevier
• Subjects: AFM; Carbon; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Epitaxial graphene layer; Evolution; Exact sciences and technology; Graphene; Graphitization; Leed; Modulation; Physics; Quantum Physics; SiC; Silicon substrates; Spectroscopy; Synthesis; AFM; Epitaxial graphene layer; SiC; Leed; Atomic force microscopy; Silicon carbide; Inorganic compounds; Epitaxial layers; Silicon; LEED; Graphitization
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2011.09.021

The current method of growing graphene by thermal decomposition of 3C-SiC(100) on silicon substrates is technologically attractive. Here, we investigate the evolution of the surface graphitization as a function of the synthesis temperature. We establish that the carbon enrichment of the surface is characterized by a clear modulation of the surface potential and structuration. The structural properties analysis of the graphene layers by low energy electron diffraction and micro-Raman spectroscopy demonstrate a graphitization of the surface.
► We study the growth of graphene by thermal decomposition of 3C-SiC/Si(100) surfaces. ► We analyse the surface graphitization as a function of the synthesis temperature. ► The carbon enrichment of the surface is characterized by a specific structuration. ► The graphitization induces a clear modulation of the surface potential.