Heusler compounds and spintronics

• Published in: Progress in crystal growth and characterization of materials Vol. 62; no. 2; pp. 371 - 397
• Main Author: Palmstroem, Chris J
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-06-2016
• Subjects: Co2FeSi; Co2MnSi; Crystal structure; Density of states; Devices; Electronics; Fe3Ga; Full-Heusler; GaAs; Half-Heusler; Half-metals; Heusler; Lattice mismatch; Magnetic moment; Magnetic properties; Magnetic random access memory; Magnetic tunnel junction; Magnetism; MBE; Metal oxide semiconductors; MgO; Molecular beam epitaxy; MRAM; MTJ; NiMnSb; Non-local voltage; Perpendicular magnetization; Point defects; Reflection high energy electron diffraction; RHEED; Schottky barrier; Semiconductors; Slater–Pauling; Spin polarization; Spin transfer torque; Spin valve; Spin-FET; Spin-LED; Spintronics; Sputtering; Stoichiometry; STT-RAM; Thermodynamic stability; Tuning; Tunneling anisotropic magnetoresistance (TAMR); Valence electron count (VEC); Spin-FET; Stoichiometry; Spin valve; MTJ; Density of states; Non-local voltage; Lattice mismatch; RHEED; Spin-LED; Co2MnSi; NiMnSb; Magnetic tunnel junction; Sputtering; MBE; MgO; Valence electron count (VEC); Molecular beam epitaxy; Perpendicular magnetization; Tunneling anisotropic magnetoresistance (TAMR); Slater–Pauling; Point defects; Semiconductors; Fe3Ga; Spin polarization; Full-Heusler; Thermodynamic stability; Spin transfer torque; GaAs; Magnetic moment; Magnetic random access memory; Reflection high energy electron diffraction; MRAM; STT-RAM; Co2FeSi; Half-Heusler; Magnetism; Half-metals; Heusler; Spintronics; Schottky barrier
• ISSN: 0960-8974; 1878-4208
• DOI: 10.1016/j.pcrysgrow.2016.04.020

Heusler compounds are a large group of intermetallic compounds with over 1000 members with similar crystal structures having a vast array of tunable properties. These properties depend on the number of valence electrons per formula unit allowing tuning of properties through composition and alloying. The Heusler lattice parameters span many metal oxides and semiconductors and their crystal structures are closely related. For spintronic applications, the magnetic and half-metallic properties, in particular, are of great interest. In this paper the electronic and magnetic properties of Heusler compounds are discussed as well as the importance of composition and defect control on tailoring their properties. Examples of applications include the great success of Heusler magnetic tunnel junction in metallic spintronic devices. The potential of going beyond metallic spintronics to the integration of Heusler compounds with III–V semiconductors for semiconductor spintronics device physics and technology, the tuning of magnetic properties, and the fabrication of Heusler compound heterostructures and superlattices are also discussed.