Two-Domain Model for Orthogonal Fluxgate

• Published in: IEEE transactions on magnetics Vol. 44; no. 11; pp. 3992 - 3995
• Main Authors: Butta, M., Ripka, P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01-11-2008; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Conductive films; Conductors; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Magnetic anisotropy; Magnetic cores; Magnetic field measurement; Magnetic materials; Magnetic sensors; Magnetism; Materials science; orthogonal fluxgate; Other topics in materials science; Perpendicular magnetic anisotropy; Physics; Saturation magnetization; Stability; two-domain; two-domain; Magnetic field measurement; Magnetic field effects; orthogonal fluxgate; Modelling; model; Magnetic fields; Magnetic properties
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/TMAG.2008.2003505

In this paper a new model for orthogonal fluxgate is presented. A first attempt to explain the working principle of the orthogonal fluxgates was done in the 1970's. We show that this model does not work well on recently developed orthogonal fluxgate sensors with thin-film core on microwire. A new more accurate two-domain model based both on domain wall motion and magnetization rotation is proposed. We show that the new model better explains the observed properties of thin-film orthogonal fluxgate.